Silicon-on-nothing (SON) technology

The "silicon on nothing" (SON) technology (Jurczak et al., 1999) and (Jurczak et al., 2000) is a promising candidate for the end-of-roadmap CMOS. In this paper we present the SON technology, show examples of sustained mono-Si nano-membranes over an empty tunnel, and deliberate on the suitability of this kind of 3-D nano-structures to build-up electronic devices. This technology opens a wide range of applications, in particular for the realization of localized single-gate fully depleted transistors on bulk substrates and of double-gate planar devices, co-integrable with bulk devices