Current-Induced Magnetization Switching Probability in MgO-Based Magnetic Tunnel Junctions

We report the results of current-induced magnetization switching (CIMS) for MgO-based magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance (TMR) ratio of about 66% and a critical current density of 4.45times10
⁶
A/cm
²
. The stable switching probability related to CIMS over 1times10
⁴
cycles is observed up to 90%. The influence between the switching current and the pulse duration is discussed