The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

N/sub 2/O was used to grow silicon polyoxide. It was found that the N/sub 2/O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O/sub 2/-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.<
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