Performance Investigation of 50-nm Insulated-Shallow-Extension Gate-Stack (ISEGaS) MOSFET for Mixed Mode Applications

An extended study of electrical characteristics of 50-nm single-material-gate insulated-shallow-extension-gate-stack (ISEGaS) MOSFET is performed using ATLAS-2D. Incorporation of dual-material-gate architecture leads to the suppression of short channel effects along with the improvement in device intrinsic gain (g
_m
timesR
_out
), voltage gain (g
_m
/I
_DS
), and I
_on
/I
_off
ratio, thereby opening a new era of ISEGaS MOSFETs for mixed mode applications