High speed III-V electrooptic waveguide modulators at lambda -1.3 mu m

Traveling wave GaAs electrooptic waveguide modulators at a wavelength of 1.3 mu m with bandwidth in excess of 20 GHz have been developed and characterized. The design and characteristics of both p-i-n modulators in microstrip configuration and Schottky barrier on n/sup -/-GaAs/semi-insulating (SI) GaAs in the coplanar strip configuration modulators are discussed. It is shown that microwave loss and slowing on n/sup +/ GaAs substrates will limit the bandwidth of the microstrip modulator to less than 10 GHz for a device 8 mm in length. Modulators with bandwidths in excess of 10 GHz are fabricated on SI GaAs substrates.<
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