Annealing Effects on Properties of Ba(Zn1/3Ta2/3)O3 Dielectric Materials

Ba(Zn
_1/3
Ta
_2/3
)O
₃
dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400-1600degC for 4 h. Morphostructural characterization was performed by using SEM and XRD. The dielectric properties were measured in the microwave range (6-7 GHz). An additional annealing at 1400 degC for 10 hours was performed in order to improve the dielectric parameters. The best parameters were achieved for the samples sintered at 1600degC with additional thermal treatment