Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric

For the first time, we report ultra-thin fully depleted silicon-on-insulator MOS transistors with WSix metal gate on HfO2 gate dielectric down to 40nm gate length. Gate work function, short channel performance and carrier mobility are presented and compared to TiN gate devices. Higher mobility values are obtained with a WSix metal gate device in comparison with a TiN metal gate transistor.