Optical and Electrical Characterization of Thin Germanium-On-Insulator (GeOI) Implanted Layers

Germanium MOSFETs with high-k gate dielectrics have received recent attention (Clavelier et al., 2005 and Wu et al., 2005) for the future ultra large scale integration (ULSI), because of their superior transport properties (Clavelier et al., 2005). Thin-body Ge-on-insulator (GeOI) structures can provide advantages like low parasitic capacitances, immunity for short-channel effects, and low junction leakage currents. For device fabrication, it is mandatory to determine optimized doping conditions. Therefore, data on ion implantation, amorphizations and dopant activation in GeOI are needed. In this paper, we use optical non destructive measurements to study amorphization due to BF
₂
implantation in GeOI ("GOF method"). The obtained results have been confirmed by the electrical characterization. Moreover, we have extracted from the measured sheet resistances the Bore activation for the considered anneal