Single Metal Gate with Dual Work Functions for FD-SOI and UTB Double Gate Technologies

In this paper, we demonstrate an integratable single metal gate (TiSiN) on Hf
_x
Si
_x
O
_y
with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1mum and 0.2mum devices, respectively