Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design

The development of hybrid magnetic-CMOS circuits such as MRAM (magnetic RAM) and magnetic logic circuit requires efficient simulation models for the magnetic devices. A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on spin-transfer torque (STT) writing approach. This very promising approach should constitute the second generation of MRAM switching technology; it features small switching current (~120uA) and high programming speed (<1ns). The macro-model has been developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.0.32 simulator. Many experimental parameters are integrated in this model to improve the simulation accuracy. So, the model can efficiently be used to design hybrid magnetic CMOS circuits