Recovery of Short Circuit Current of 3J Solar Cells by Current Injection at Low Temperature

InGaP/GaAs/Ge triple-junction (3J) solar cells designed for space applications were irradiated with 10 MeV protons at 3times10
¹³
/cm
²
at 210 K. Current at 0.25 A/cm
²
was injected into the irradiated 3J solar cells after irradiation at 210 K to avoid the thermal annealing effects. The short circuit current (I
_sc
) recovered with increasing current injection time, and the recovery saturated at current injection times above 1000 sec. The saturated I
_sc
was 98% of the initial value. The defect annealing rate (A) was estimated to be between 0.003 and 0.01/s from the fitting of the current injection time dependence of the recovery of I
_sc