Angular Distribution with Respect to Growth Direction of Microcrystalline Silicon Grown in Hybrid Phase

Angular distribution with respect to (220) growth direction of μc-Si method has been studied by employing thickness evolutions of X-ray pole figure measurements. The μc-Si films with the (220) preferential orientation were prepared by plasma enhanced chemical vapor deposition method at low substrate temperatures (~200°C). As for the Si(220) grains, the angular distribution of the tilt angle in the whole growth region was improved during deposition, yielding that the growth directions became almost parallel to the substrate normal with small tilt angles. The decrease in the angular of the Si(220) grains of whole region of film is discussed from the aspect of the hybrid-phase growth.