SiCX Alloy Films Deposited by Hot-Wire CVD using SiH3CH3 as Carbon Sauce

The hetero-structured SiC
_x
films have been deposited by hot-wire CVD using SiH
₃
CH
₃
as carbon source gas. Although the carbon source gas ratio and filament temperature in the deposition using SiH
₃
CH
₃
were smaller than those using C
₂
H
₆
, the carbon content in the SiH
₃
CH
₃
sample was almost the same as that in the C
₂
H
₆
sample. The optical energy gap in the SiH
₃
CH
₃
sample was larger than that in the C
₂
H
₆
sample. The SiH
₃
CH
₃
sample deposited under the optimized deposition condition showed wide optical energy gap of 1.99 eV and large dark conductivity of 15.1 S/cm