Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells

We have investigated the characteristics of p-GaAs/i-n-Ga
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In
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N
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As
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heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized i-layer thickness of 600nm, maximum quantum efficiency of > 80% has been obtained, and the hole diffusion length in n-Ga
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In
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N
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As
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film was ~160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm
²
has been achieved