Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation

Using the post-gate-annealing, the SiN
_x
passivation and the post-passivation-annealing, the gate characteristics of 0.4 mum Al
_0.26
GaN-GaN HEMT on Si were successfully improved. With SiNx passivation using remote-plasma enhanced chemical vapor deposition, the current collapse was effectively suppressed. And it was found that annealing after passivation can improve the gate characteristics without serious change of the pulsed IV characteristics of the devices. As a result, maximum extrinsic transconductance, IDSS and pulsed drain-source current are increased by 12 %, 32 % and 31 %, respectively. And the gate-drain breakdown voltage was increased from 23 V to 80 V