650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on chemical vapor deposition (CVD)-diamond heat spreader and standard C-mounts, the 100-mum stripe width lasers showed reliable operation over 5000 h at 15 degC and 600 mW