Transistor Forming Effects in n-Type Germanium

Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.