Time-Domain-Reflectometry for Capacitance–Voltage Measurement With Very High Leakage Current

Accurate capacitance-voltage (C-V) measurement of MOS capacitor with very high leakage current is a problem that does not yet has a satisfactory solution. Elaborated methods can improve the accuracy but increase the measurement complexity at the same time. Here, we introduce a novel new method to measure C-V under high leakage condition based on time-domain-reflectometry. This method is simple to use and offers high accuracy