High-Performance Metal–Insulator–Metal Capacitors Using Amorphous $\hbox{BaSm}_{2}\hbox{Ti}_{4}\hbox{O}_{12}$ Thin Film

The dielectric properties of the amorphous BaSm
₂
Ti
₄
O
₁₂
(BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum
²
at 100 kHz and a low leakage current density of 1.790 nA/cm
²
at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V
²
and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor