Silicon ion implantation of YBaCuO films for bolometer application

Silicon ion implantation was used to shift the critical temperature of YBaCuO films continuously to lower temperatures. The variation of T/sub c/ and other superconducting properties with ion fluence was investigated in detail. Based on these results a new bolometer structure was designed, fabricated and characterised. The sensor area of the bolometer consists of a locally implanted area with a lower critical temperature, while the contact pads and connecting lines retain the original T/sub c/. At the operating temperature the bolometer has a exactly defined temperature sensitive area and shows a lower contact resistance. Finally the feasibility of integrated bolometer arrays is discussed.<
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