The Dynamic Current Distribution of a Multi-Fingered GGNMOS Under High Current Stress and HBMESD Events

In this paper, the direct substrate potential (DSBP) measurement is introduced to investigate the dynamic current distribution of the multi-fingered GGNMOS under high current stress events. The DSBP measurement results show several new phenomena. The first turn-on regions are at the finger edges near the P+ guard-ring since the avalanche breakdown occurs there. Subsequently, the discharge regions quickly move to the finger centers and then, either expand into other fingers or shrink gradually.