Statistical and voltage scaling properties of post-breakdown for ultra-thin-oxide PFETs in inversion mode

Unlike in NFET devices, the understanding of progressive BD in PFETs stressed in inversion requires the consideration of several breakdown paths wearing out in parallel and competing to cause the final device failure. In this work, we consider the implications of this competition on the statistical properties of progressive breakdown in ultra-thin-gate-oxide PFETs stressed in inversion mode. Voltage acceleration of breakdown and device failure is also considered