RF Extrinsic Resistance Extraction Considering Neutral-Body Effect for Partially-Depleted SOI MOSFETs

The extraction of extrinsic resistances is essential to RF CMOS modeling. In this work, we investigate the extrinsic resistance extraction for PD SOI MOSFETs. We have shown that, for RF SOI MOSFETs, the coupling path between the source and drain terminals through the neutral-body region beneath the gate-oxide layer makes the resistance expressions behave frequency-dependently. After taking this effect into account, we develop a physical RF extrinsic resistance extraction methodology for PD SOI MOSFETs