Metal Gate Technology for 45nm and Beyond

Metal gate is one of the most expected technologies for CMOS device performance improvement. However, its integration to CMOS devices is not so easy compared with poly-Si gate devices. In addition it needs a work function tuning method to adjust FET threshold voltage. In the presentation, these problems are discussed based on author's research result of Mo and FUSI (fully silicided) gate referring state of the art of this field