Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs

In this paper, an analytical model is proposed for the impact of the twin-gate (TG) configuration on the floating-body-related excess Lorentzian noise in silicon-on-insulator MOSFETs. The model is based on the relative contributions in the master (source) and slave (drain) parts of the TG transistor to the linear kink effect and back-gate-induced (BGI) Lorentzians. Several new experimental features can be explained both qualitatively and quantitatively, like the lowering of the BGI excess noise by the TG structure, or the crossing of the noise spectra at higher frequencies in the I/f
²
roll-off part. The experimental data on the Lorentzian time constant (tau) and amplitude (S
_I
(0)) also seems to suggest a modest change in the depletion-layer capacitance for the TG transistor, compared with the single-gate one