Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high temperature and reliable operation

An optimum structure of 630 nm-band InGaAlP tensile-strained multiquantum-well (MQW) laser diodes for high temperature and reliable operation has been discussed. Dependences of operation characteristics on well number, well width and tensile strain, have been investigated. From these results, it has been found that introducing tensile strain into well layers reduces threshold current, but it also reduces characteristic temperature. In addition, large tensile strain over a critical condition for lattice relaxation might cause inferior operation reliability. The authors have reached the conclusion that an MQW structure with four 80 /spl Aring/ InGaP wells, having a lattice mismatch of -0.75% is optimum for high temperature and reliable operation in the 630 mm-band.<
>