DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001)

We have studied the characteristics of 1.65-mum InAs self-organized quantum-dash lasers grown on InP (001) substrates, wherein special techniques of p-doping of quantum dashes and tunnel injection are incorporated for the first time. We measured a very large T
₀
(196 K) in p-doped quantum-dash lasers, accompanied by an increase in threshold current density (J
_th
~1600 A/cm
²
), compared to the undoped quantum-dash lasers (T
₀
=76 K and J
_th
~950 A/cm
²
). The p-doped lasers exhibit a maximum 3-dB bandwidth of 8 GHz, chirp ~1.0 Aring, and alpha-parameter ~1.0 (measured at subthreshold bias conditions) at a temperature of 278 K. Similar undoped quantum-dash lasers exhibit a 3-dB bandwidth of 6 GHz. A self-consistent model, that includes Auger recombination in quantum dashes, is developed to calculate the threshold current at various temperatures. A comparison of the calculated threshold current and T
₀
with measured values reveals that Auger recombination in quantum dashes plays a major role in determining the values of threshold current and T
₀
in both undoped and p-doped quantum-dash lasers. While p-doping increases the gain and differential gain, the presence of wetting layer states, the relatively large inhomogeneous broadening of quantum dashes, and the substantially increased Auger recombination upon p-doping severely limit the potential benefits. Superior characteristics, including large modulation bandwidth (f
_{-3 dB}
~12 GHz), near-zero alpha-parameter, and very low chirp (~0.3 Aring), are achieved when the technique of tunnel injection is also utilized