Ultralow threshold 1.3-/spl mu/m InGaAsP-InP compressive-strained multiquantum-well monolithic laser array for parallel high-density optical interconnects

An ultralow-threshold 1.3-/spl mu/m InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active laser width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20/spl deg/C and 1.62 mA at 90/spl deg/C, as a long-wavelength laser, is obtained by employing a short cavity (100 /spl mu/m) uith high-reflection coatings.<
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