Amplified MOS imager for soft X-ray imaging

This paper describes a new area sensor for soft X-rays, and its performance. The operational principle is based on detecting the change in potential of a floating photodiode caused by X-ray-induced electron-hole pairs generation in a stacked amorphous silicon photoconversion layer. The photoresponse was measured at wavelength from 50 /spl Aring/ to 160 /spl Aring/. The signal to noise ratio of 25 dB was achieved, when the number of incident 70 /spl Aring/ X-ray photons is as low as 230/pixel. Quantum efficiency (stored carriers/photon) at 70 /spl Aring/ wavelength was 22. In addition, good reproducibility (<10% deviation) between different detectors and good reproducibility (<20% deviation) after ten months were also clarified. The performance of this area sensor indicates its potential for detection of soft X-ray images.<
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