High performance integrated PA, T/R switch for 1.9 GHz personal communications handsets

The authors present a state of the art power amplifier and T/R switch GaAs MMIC product for the 1.9 GHz Japanese PHP system. The design consists of a single die (1.8 mm /spl times/ 1.2 mm) in a 28 pin QSOP surface mount plastic package. The two stage power amplifier exhibits 28 dB gain with greater than 44% PAE at a P1dB of 23 dBm. The adjacent channel interference level is better than 60 dBc at /spl plusmn/600 kHz when tested at this rated output power. The T/R switch exhibits 1 dB insertion loss, 30 dB isolation and OIP3 of greater than 44 dBm when used with two 0.25 watt tones.<
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