Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells

We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 /spl Aring/-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate. We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors. The optically-pumped device has a low threshold pump power of 4.2 kW/cm
²
at room temperature and operates at a wavelength of 1.44 μm.