Optoelectronic integrated receivers on InP substrates by organometallic vapor phase epitaxy

The monolithic integrated ion of a p-i-n photodiode and a high-electron mobility transistor (HEMT) amplifier on an InP substrate by organometallic vapor-phase epitaxy is discussed. The receiver operated with up to 1.6 Gb/s nonreturn-to-zero optical signals. The responsivity was 1 kV/W and the minimum optical power at a bit error rate of 10/sup -9/ was -24 dBm for 400 Mb/s nonreturn-to-zero optical signals.<
>