Resonant tunneling injection quantum-well lasers

We report, for the first time, the observation of resonant tunneling induced negative differential characteristics in the light-current (L-I) and light-voltage (L-V) curves of a single-quantum-well semiconductor laser. Broad-stripe lasers have exhibited CW threshold current density of 50 A/cm/sup 2/ at 77 K, with a sharp decrease in output light power at 68 A/cm/sup 2/, which corresponds to a resonant point in the current-voltage (I-V) characteristics of the device. Peak to valley ratios of more than 1.5:1 were observed in the L-I and L-V curves.<
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