Nondestructive RBSOA characterization of IGBTs and MCTs

Nondestructive evaluation of IGBTs and MCTs are reported and their corresponding reverse bias safe operating areas (RBSOAs) established. It was observed that compared to BJTs, IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs.<
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