Short-channel vertical NMOSFETs for high density fast SRAMs

Vertical NMOSFETs with /spl sim/0.3 /spl mu/m channel lengths and 105 /spl Aring/ gate oxide providing current drives of 445 (/spl mu/A/spl mu/m) for V/sub G/=4, V/sub D/=3.3 V, with well controlled short channel (DIBL=44 mV/V) and sub-threshold behavior (slope=88 mV/dec.) have been fabricated. Gate oxide integrity, the effect of arsenic and antimony as buried layer dopants and the symmetry of operation are discussed.<
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