An advanced calibration method for modelling oxidation and mechanical stress in sub-micron CMOS isolation structures

A new approach is to provide accurate simulation of both oxidation topography and mechanical stress in LOCOS-derived isolation structures forecast for 0.25 /spl mu/m CMOS is presented. Advanced modelling and characterisation have been used to calibrate 2D oxidation and stress analysis models with account of the measurement instrumental response function. A revision to the mechanical properties of thin nitride and oxide layers is proposed to explain the results.<
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