Mapping of the band offset at InAlAs/InP interfaces using room temperature spectrally resolved scanning photoluminescence

The authors demonstrate that the spatial uniformity of the band offset at the InAlAs/InP (type II) interfaces can be determined using spectrally resolved scanning photoluminescence (SPL) measurements. Experiments were carried out on InAlAs/InP/InP heterostructures grown by the metal-organic chemical vapor deposition technique. Spatial variations of the band offset and of the InAlAs bandgap at long range and in the proximity of dislocations are reported, which were also revealed by SPL measurements.<
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