Vertical-cavity-surface-emitting-laser with low series resistance and low operating voltage

In the past years vertical-cavity-surface-emitting-lasers (VCSELs) found great interest for many applications in optoelectronic systems. Disadvantages, however, are the frequently reported high series resistances, arising from current injection over the multiple heterointerfaces of the distributed bragg reflectors (DBRs). We circumvent this problem by contacting both cladding layers of the pin-double heterostructure directly. The undoped active region consists of three 80 /spl Aring/ InGaAs strained quantum wells separated by GaAs spacers.<
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