The extraction of HEMT transistor DC parameters using the transistor electrical characterization and analysis program (TECAP)

TECAP has three models for the GaAs MESFET, the quadratic model, the cubic model, and the Statz model. The authors investigated the accuracy of these three models. The maximum error and the r.m.s. (root mean square) error between simulated and measured DC characteristics I/sub D/ vs. V/sub GS/ and I/sub D/ vs. V/sub DS/ show that the Statz model has the best accuracy for HEMT (high electron mobility transistor) DC simulation.<
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