A physically based C/sub /spl infin//-continuous model for small-geometry MOSFET's

An explicit single-piece MOSFET model is derived from a surface potential formulation. The model covers small-geometry effects, like mobility reduction, channel-length modulation, carrier velocity saturation, and short- and narrow-channel effects. Good agreement has been found with measured characteristics. Furthermore, the DC current calculated using the new model shows smooth transitions through all regions of operation. Therefore the convergence when employed in circuit simulation will be improved.<
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