Optical control and injection locking of monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MODFET oscillators

Optical tuning and injection locking characteristics of MMIC oscillators made with InP-based 0.25 /spl mu/m gate In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors (MODFETs) have been investigated. Optical tuning has been performed on the X- and R-band oscillator circuits and a maximum tuning range of 8.7 MHz and 11.7 MHz, respectively, has been measured. The tuning characteristics have been explained in terms of changes in the MODFET characteristics with absorption of incident light. Direct optical subharmonic injection locking of these oscillator circuits have been done at 10 and 19 GHz, which are the highest achieved for InP-based MMIC's.<
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