Quasi-static behavior of MOS devices in the freeze-out regime

The quasi-static CV curves (low-frequency C-V curves) measured in the freeze-out regime of MOS transistors result in peaks near the accumulation or inversion regions depending on the direction of the voltage sweep. In this paper, we report a study of these peaks in n- and p-channel CMOS transistors within and outside compensating wells. The peaks in the quasi-static CV curves are attributed to the capture of minority carriers near inversion by the interface states and the capture of majority carriers by the interface states near accumulation.<
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