Plasma resistant modified I-line, deep UV and E-beam resists

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).<
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