A simplified field analysis of a distributed IMPATT diode using multiple uniform layer approximation

A small-signal field analysis of a distributed IMPATT diode is presented. The active region of the diode is assumed to consist of a uniform avalanche layer and avalanche-free drift layers. The propagation constant and field distributions are obtained without numerical solution of differential equations. The effects of losses caused by the presence of inactive layers are included in the analysis. Numerical examples of GaAs double-Read distributed IMPATT diodes are given which show the dependence of the amplification characteristics on the thicknesses of the avalanche and drift layers.<
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