Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnects

An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.