Formation and control of boron buried layers in silicon using an excimer laser

Buried layers have been shown to enhance performance of Si MOSFETs in the deep submicrometer regime. Epitaxial growth methods such as atomic layer doping or ion implantation are currently used for the formation of such doping profiles. In this work, we propose an alternative approach, using a XeCl (/spl lambda/=308 mn) pulsed excimer laser, for the fabrication of pulse-shaped B profiles in Si. This process affords simplicity, versatility, and independent control over the depth, width, and the height of the B buried layer.<
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