The influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

The RF small-signal performance of GaAs MESFETs and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess-depth influence are theoretically analyzed with the help of a novel device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FETs and to realize process-tolerant MMIC amplifiers.<
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