Technical thin film formation methods in low temperature plasma

The relation between the nucleation and growth of thin films, and the deposition variable is presented. This relation serves as a rough guide in the preparation of films with particular properties. The selection of the deposition technique for making the film is one of the fatal factors that should be considered. The properties and applications of low pressure low temperature plasma are given. The formation of Si-N (Silicon-Nitrogen) thin film on silicon substrate at low pressure low temperature by plasma CVD is presented.<
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