Modelling of power semiconductor devices for use in circuit simulations

The combined use of several modelling techniques and tools to derive realistic models of power semiconductor devices for use in circuit simulations is illustrated using the GTO thyristor as an example. The resulting GTO model uses analytical expressions to describe its internal physics. Direct implementations of these equations in the SPICE and Saber simulators are then used to obtain rigorous comparison of measured and simulated waveforms.<
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