Integration of a modulated barrier photodiode with a doped-channel quasi-MISFET

An integration scheme for a front-end photoreceiver is demonstrated, wherein an identical GaAs-InGaAs-AlGaAs heterostructure is used for realizing a modulated barrier photodiode (MBP) and a doped-channel quasi-MISFET. The detectors exhibit optical gains of 200. The FETs have an extrinsic transconductance of 250 mS/mm, with f/sub f/=12 GHz and f/sub max/=21 GHz.<
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